Dislocation/stacking fault interactions

FCC Ag, Williams EAM potential, 343 atoms per element in the coarse-grained domain. Results using larger models are published in Xu et al., 2017.

In the figure below, the atoms that fill in the jagged interstices are not shown for a better visualization of the elements. In the Langevin dynamic simulation, a screw dislocation on the (1\bar{1}1) plane and an intrinsic stacking fault on the (\bar{1}11) plane are first created; then subject to a \gamma_{zx} simple shear strain, the dislocation moves toward and is then transmitted across the stacking fault directly.

dislocation-sf

The movie below and the log file are produced using the input file and rendered by OVITO: