Dislocation/stacking fault interactions

FCC Ag, Williams EAM potential, 343 atoms per element in the coarse-grained domain. Results using larger models are published in Xu et al., 2017.

In the figure below, the atoms that fill in the jagged interstices are not shown for a better visualization of the elements. In the Langevin dynamic simulation, a screw dislocation on the (1\bar{1}1) plane and an intrinsic stacking fault on the (\bar{1}11) plane are first created; then subject to a \gamma_{zx} simple shear strain, the dislocation moves toward and is then transmitted across the stacking fault directly.


The movie below and the log file are produced using theinput file and rendered by OVITO: